You are here

Back to top

MOS Interface Physics, Process and Characterization (Paperback)

MOS Interface Physics, Process and Characterization Cover Image
$61.99
Usually Ships in 1-5 Days

Description


The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.

About the Author


Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents. Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.

Product Details
ISBN: 9781032106281
ISBN-10: 103210628X
Publisher: CRC Press
Publication Date: January 29th, 2024
Pages: 162
Language: English