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Insulated Gate Bipolar Transistor Igbt Theory and Design (IEEE Press Series on Microelectronic Systems) (Hardcover)

Insulated Gate Bipolar Transistor Igbt Theory and Design (IEEE Press Series on Microelectronic Systems) Cover Image
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Description


A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.

About the Author


VINOD KUMAR KHANNA, PhD, is a senior scientist working in the solid-state devices division of Central Electronics Engineering Research Institute in Pilani, India. He has been extensively involved for more than twenty years in device, process design and fabrication of power semiconductor devices. He received his PhD in Physics from Kurukshetra University in 1988. A Fellow of the Institution of Electronics and Telecommunication Engineers and a lifetime member of several scientific and professional organizations, Dr. Khanna has published over thirty research papers in international journals and conference proceedings and written two previous books entitled, Handbook of Electrical & Electronics Engineering Fundamentals, and Digital Signal Processing, Telecommunications & Multimedia Technology.

Product Details
ISBN: 9780471238454
ISBN-10: 0471238457
Publisher: Wiley-IEEE Press
Publication Date: August 19th, 2003
Pages: 648
Language: English
Series: IEEE Press Series on Microelectronic Systems